Designing the future of rail and renewables with SiC modules
Update: 2024-11-18
Description
In this episode, we talk to Konrad Schraml and Caspar Leendertz again about their nomination for the Deutsche Zukunftspreis. Listen to learn about the technical challenges the team from Infineon and TU Chemnitz overcame to create the world's first 3.3 kV SiC MOSFET with a vertical channel and innovative copper contacting.
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